INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENT

被引：32

作者：

MITO, I

KITAMURA, M

KAEDE, K

ODAGIRI, Y

SEKI, M

SUGIMOTO, M

KOBAYASHI, K

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 01期

关键词：

D O I：

10.1049/el:19820002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2 / 3

页数：2

相关论文

共 4 条

[1] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS
HIRAO, M
DOI, A
TSUJI, S
NAKAMURA, M
AIKI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4539 - 4540
[2] FABRICATION AND LASING PROPERTIES OF MESA SUBSTRATE BURIED HETEROSTRUCTURE GAINASP-INP LASERS AT 1.3 MU-M WAVELENGTH
KISHINO, K
SUEMATSU, Y
TAKAHASHI, Y
TANBUNEK, T
ITAYA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 160 - 164
[3] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
NAGAI, H
NOGUCHI, Y
TAKAHEI, K
TOYOSHIMA, Y
IWANE, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L218 - L220
[4] LOW THRESHOLD INGAASP-INP BURIED CRESCENT LASER WITH DOUBLE CURRENT CONFINEMENT STRUCTURE
OOMURA, E
MUROTANI, T
HIGUCHI, H
NAMIZAKI, H
SUSAKI, W
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 646 - 650