LOW THRESHOLD INGAASP-INP BURIED CRESCENT LASER WITH DOUBLE CURRENT CONFINEMENT STRUCTURE

被引：37

作者：

OOMURA, E

MUROTANI, T

HIGUCHI, H

NAMIZAKI, H

SUSAKI, W

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：646 / 650

页数：5

共 24 条

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