SHUNT CURRENT AND EXCESS TEMPERATURE SENSITIVITY OF ITH AND ETA-EX IN 1-3 MU-M INGAASP DH LASERS

被引：16

作者：

NAMIZAKI, H

HIRANO, R

HIGUCHI, H

OOMURA, E

SAKAKIBARA, Y

SUSAKI, W

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 16期

关键词：

D O I：

10.1049/el:19820478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：703 / 704

页数：2

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER
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[3] INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENT
MITO, I
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[4] LOW THRESHOLD INGAASP-INP BURIED CRESCENT LASER WITH DOUBLE CURRENT CONFINEMENT STRUCTURE
OOMURA, E
MUROTANI, T
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 646 - 650
[5] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
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[J]. ELECTRONICS LETTERS, 1980, 16 (01) : 42 - 44
[6] ANALYSIS OF THRESHOLD TEMPERATURE CHARACTERISTICS FOR INGAASP-INP DOUBLE HETEROJUNCTION LASERS
YANO, M
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