V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER

被引：55

作者：

ISHIKAWA, H ^{[1
]}

IMAI, H ^{[1
]}

TANAHASHI, T ^{[1
]}

NISHITANI, Y ^{[1
]}

TAKUSAGAWA, M ^{[1
]}

TAKAHEI, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,3-9-11 MIDORI CHO,MUSASHINO,TOKYO 180,JAPAN

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 13期

关键词：

D O I：

10.1049/el:19810325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：465 / 467

页数：3

共 5 条

[1]

Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10

[2] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].

HSIEH, JJ ;

SHEN, CC .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :429-431

[3] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].

KIRKBY, PA ;

THOMPSON, GHB .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589

[4] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT [J].

MUROTANI, T ;

OOMURA, E ;

HIGUCHI, H ;

NAMIZAKI, H ;

SUSAKI, W .

ELECTRONICS LETTERS, 1980, 16 (14) :566-568

[5] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION [J].

NAGAI, H ;

NOGUCHI, Y ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

IWANE, G .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L218-L220

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