INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT

被引：33

作者：

MUROTANI, T

OOMURA, E

HIGUCHI, H

NAMIZAKI, H

SUSAKI, W

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 14期

关键词：

D O I：

10.1049/el:19800393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：566 / 568

页数：3

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