CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS

被引:36
作者
KIRKBY, PA
机构
[1] Standard Telecommunication Laboratories Ltd., Harlow, Essex, London Road
关键词
Gallium arsenide; Semiconductor junction lasers;
D O I
10.1049/el:19790586
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Channelled-substrate GaAs/GaAlAs injection lasers with very narrow current-confining stripe contacts are described. They have threshold currents less than half those previously reported for this type of device. The best devices had a room-temperature threshold current of only 12 mA pulsed and 14 mA c.w. The lasers also have very good high-temperature performance and c.w. operation has been obtained up to 160°C. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:824 / 826
页数:3
相关论文
共 6 条
[1]   CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J].
AIKI, K ;
NAKAMURA, M ;
KURODA, T ;
UMEDA, J .
APPLIED PHYSICS LETTERS, 1977, 30 (12) :649-651
[2]   ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS [J].
BURNHAM, RD ;
SCIFRES, DR .
APPLIED PHYSICS LETTERS, 1975, 27 (09) :510-511
[3]  
FURUZE T, 1979, SEP P OPT COMM C AMS
[4]   CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].
KIRKBY, PA ;
THOMPSON, GHB .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589
[5]   CHANNELED-SUBSTRATE-PLANAR STRUCTURE ALXGA1-XAS LASERS - ANALYTICAL WAVEGUIDE STUDY [J].
KURODA, T ;
NAKAMURA, M ;
AIKI, K ;
UMEDA, J .
APPLIED OPTICS, 1978, 17 (20) :3264-3267
[6]   LATERAL-CURRENT CONFINEMENT IN A GAAS PLANAR STRIPE-GEOMETRY AND CHANNELED SUBSTRATE BURIED DH LASER USING REVERSE-BIASED P-N-JUNCTIONS [J].
TSANG, WT ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2629-2638