LATERAL-CURRENT CONFINEMENT IN A GAAS PLANAR STRIPE-GEOMETRY AND CHANNELED SUBSTRATE BURIED DH LASER USING REVERSE-BIASED P-N-JUNCTIONS

被引：24

作者：

TSANG, WT

LOGAN, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2629 / 2638

页数：10

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[1] GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
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[8] CURRENT THRESHOLDS IN STRIPE-CONTACT INJECTION LASERS
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
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[J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 84 - &