ANODIC OXIDATION OF INSB IN NONAQUEOUS ELECTROLYTES

[1] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &

[2] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 244 - 251

[3] GRI NJ, 1968, MAR AM PHYS SOC SOL

[4] GRI NJ, 1968, MAY REC NEWS PAP BOS

[5] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[6] PHOTOCONTROLLED SURFACE CONDUCTANCE IN ANODIZED INSB [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1524 - &

[1] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &

[2] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 244 - 251

[3] GRI NJ, 1968, MAR AM PHYS SOC SOL

[4] GRI NJ, 1968, MAY REC NEWS PAP BOS

[5] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[6] PHOTOCONTROLLED SURFACE CONDUCTANCE IN ANODIZED INSB [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1524 - &