TEMPERATURE FLUCTUATIONS DURING GROWTH AND IMPURITY SEGREGATION IN INSB CRYSTALS

被引：4

作者：

ALBON, N

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来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 09期

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D O I：

10.1063/1.1702587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2912 / +

页数：1

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[1] ANISOTROPIC SEGREGATION IN INSB
ALLRED, WP
BATE, RT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : 258 - 261
[2] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
EDWARDS, WD
[J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443
[3] IMPURITY STRIATIONS IN UNROTATED CRYSTALS OF INSB
GATOS, HC
STRAUSS, AJ
LAVINE, MC
HARMON, TC
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) : 2057 - &
[4] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS
HALL, RN
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 836 - 839
[5] SILICON N-P-N GROWN JUNCTION TRANSISTORS
TANENBAUM, M
VALDES, LB
BUEHLER, E
HANNAY, NB
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 686 - 692