IMPROVING TUNNELING JUNCTION IN AMORPHOUS-SILICON TANDEM SOLAR-CELLS

We report new results on a tunneling junction in amorphous silicon tandem solar cells using the metal oxide, niobium oxide (NbOx), as the recombination layer and the advanced doping gas, trimethylboron [B(CH 3) 3 ], in the p+ layer. The new tunneling junction has a low series resistance and minimizes optical loss. The advantage of the NbOx layer is its high transparency, hence a relatively thick (∼10 nm) layer can be used. The ability to use a thick oxide layer is important for the implementation of the tunneling junction in the production of large-area panels.