ON THE JET ETCHING OF N-TYPE SI

被引：7

作者：

SCHMIDT, PF

KEIPER, DA

机构：

来源：

关键词：

D O I：

10.1149/1.2427443

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：592 / 596

页数：5

共 12 条

DEWALD, JF .

[2]

DEWALD JF, 1957, PHYS CHEM SOLIDS, V2, P55

[3]

Engell H. J., 1956, Z PHYS CHEM, V7, P158

[4]

FILINSKII J, 1957, PHYS REV, V107, P1193

[5] TYPE OF ION MIGRATION IN A METAL-METAL OXIDE SYSTEM [J].

FLINT, O ;

VARLEY, JHO .

[6]

Heusler K.E., 1958, Z PHYS CHEM, V15

[7]

KESSLER FR, 1958, Z NATURFORSCH PT A, V13, P295

[8]

SCHMIDT PE, UNPUBLISHED

[9] ANODIC FORMATION OF OXIDE FILMS ON SILICON [J].

SCHMIDT, PF ;

MICHEL, W .

TILEY, JW ;

WILLIAMS, RA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1706-1708