RELIABILITY OF PULSED ELECTRON-BEAM-ALLOYED AUGE-PT OHMIC CONTACTS ON GAAS

被引：10

作者：

LEE, CP

WELCH, BM

TANDON, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期

关键词：

D O I：

10.1063/1.92792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：556 / 558

页数：3

共 7 条

[1]

ECKHARDT G, 1979, AIP C P, V50, P641

[2]

GOLD RB, 1979, AIP C P, V50, P635

[3] ALLOYING BEHAVIOR OF AU-GE-PT OHMIC CONTACTS TO GAAS BY PULSED ELECTRON-BEAM AND FURNACE HEATING [J].

LEE, CP ;

TANDON, JL ;

STOCKER, PJ .

ELECTRONICS LETTERS, 1980, 16 (22) :849-850

[4] Q-SWITCHED RUBY-LASER ALLOYING OF OHMIC CONTACTS ON GALLIUM-ARSENIDE EPILAYERS [J].

MARGALIT, S ;

FEKETE, D ;

PEPPER, DM ;

LEE, CP ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :346-347

[5]

TANDON JL, 1979, AIP C P

[6] INVESTIGATION OF AU-GE-NI SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J].

WITTMER, M ;

PRETORIUS, R ;

MAYER, JW ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :433-&

[7] INVESTIGATION OF AU-GE-NI AND AU-GE-PT SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J].

WITTMER, M ;

FINSTAD, T ;

NICOLET, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :935-936

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