METHYL(ALLYL)TELLURIDE AS A TE PRECURSOR FOR GROWTH OF (HG,CD)TE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：9

作者：

HAILS, JE ^{[1
]}

COLEHAMILTON, DJ ^{[1
]}

BELL, W ^{[1
]}

机构：

[1] UNIV ST ANDREWS,SCH CHEM,ST ANDREWS KY16 9ST,FIFE,SCOTLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91113-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Methyl(allyl)telluride (Me(allyl)Te) has previously been used as a precursor for the metalorganic vapour phase epitaxy (MOVPE) growth of CdTe and HgTe. The decomposition reactions of Me(allyl)Te alone and in all combinations with Me(2)Cd and Hg and in H-2 and He carrier gases have been studied using the technique of gas chromatography-mass spectrometry. The main Te containing product from the decomposition of Me(allyl)Te alone is Me(2)Te(2) with little Te deposited. When Me(allyl)Te, Me(2)Cd and Hg were co-pyrolysed in H-2 at 350 degrees C the observed products included methane, 1-butene, 1,5-hexadiene and Me(2)Te. A mechanism for the decomposition is proposed. By comparison with (Pr2Te)-Te-i we would predict that Me(allyl)Te is not likely to be a good precursor.

引用

页码：596 / 601

页数：6

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