DIRECT GROWTH OF HG1-XCDXTE ALLOYS IN A COLD-WALL, ANNULAR REACTANT INLET INVERTED-VERTICAL ORGANOMETALLIC VAPOR-PHASE EPITAXY REACTOR AT 300-DEGREES-C

An annular reactant inlet inverted-vertical (ARIIV) organometallic vapor phase epitaxy (OMVPE) reactor, designed specifically for direct growth of Hg1-xCdxTe (MCT), is presented. The reactor was characterized in terms of the measured properties of CdTe, HgTe and MCT epilayers grown in it. The growth rates were correlated with substrate temperature, reactant flow rates (dimethylcadmium - DMCD, methylallyltelluride - MATe, and Hg) and pedestal position relative to the annular reactant inlet. The composition and growth rate of MCT were determined as a function of Cd-to-Hg ratio, at constant Te flow rate, at 300-degrees-C. The thickness and compositional uniformities of 16 cm2 MCT epitaxial layers were better than +/-2% and 0.602+/-0.002 in x, respectively.