METALORGANIC GROWTH OF HIGH-PURITY HGCDTE FILMS

被引：25

作者：

HOKE, WE

LEMONIAS, PJ

TRACZEWSKI, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1092 / 1094

页数：3

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[1] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
GHANDHI, SK
BHAT, I
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 779 - 781
[2] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS
HOKE, WE
TRACZEWSKI, R
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5087 - 5089
[3] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE
IRVINE, SJC
MULLIN, JB
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 107 - 115
[4] EFFECTS OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CDXHG1-XTE
JONES, CL
QUELCH, MJT
CAPPER, P
GOSNEY, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 9080 - 9092
[5] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS
MULLIN, JB
IRVINE, SJC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 178 - 181
[6] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS
MULLIN, JB
IRVINE, SJC
ASHEN, DJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 92 - 106