METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS

被引：51

作者：

HOKE, WE

TRACZEWSKI, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：5087 / 5089

页数：3

相关论文

共 7 条

[1] MOLECULAR-BEAM EPITAXY OF CDTE AND CDXHG1-XTE [J].

FAURIE, JP ;

MILLION, A ;

JACQUIER, G .

THIN SOLID FILMS, 1982, 90 (01) :107-112

[2] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].

IRVINE, SJC ;

MULLIN, JB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115

[3] EFFECTS OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CDXHG1-XTE [J].

JONES, CL ;

QUELCH, MJT ;

CAPPER, P ;

GOSNEY, JJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9080-9092

[4] VAPOR-PHASE EPITAXY OF CDXHG1-XTE USING ORGANOMETALLICS [J].

MULLIN, JB ;

IRVINE, SJC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (09) :L149-L151

[5] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS [J].

MULLIN, JB ;

IRVINE, SJC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :178-181

[6] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS [J].

MULLIN, JB ;

IRVINE, SJC ;

ASHEN, DJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :92-106

[7] GROWTH OF HIGH-QUALITY EPITAXIAL CDXHG1-XTE FILMS BY SPUTTER DEPOSITION [J].

ROUSSILLE, R ;

GUILLOT, S ;

LEFEUVRE, G .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :130-134