共 10 条
- [1] THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 107 - 115IRVINE, SJCMULLIN, JB
- [2] A STUDY OF THE GROWTH OF HGTE FROM THE VAPOR[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (03) : 458 - 468IRVINE, SJCMULLIN, JB
- [3] LOW-TEMPERATURE CVD GROWTH OF EPITAXIAL HGTE ON CDTE[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1142 - 1144KUECH, TFMCCALDIN, JO
- [4] GROWTH OF CADMIUM TELLURIDE BY SOLVENT EVAPORATION[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 151 - 154LUNN, BBETTRIDGE, V
- [5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 644 - +MANASEVIT, HMSIMPSON, WI
- [6] MULLIN J, UNPUB
- [7] Mullin J. B., 1973, Journal of Luminescence, V7, P176, DOI 10.1016/0022-2313(73)90066-5
- [8] VAPOR-PHASE EPITAXY OF CDXHG1-XTE USING ORGANOMETALLICS[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (09) : L149 - L151MULLIN, JBIRVINE, SJC
- [9] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 92 - 106MULLIN, JBIRVINE, SJCASHEN, DJ
- [10] VAPOR-PHASE GROWTH OF HG1-XCDXTE EPITAXIAL LAYERS[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 659 - 678VOHL, PWOLFE, CM