HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS

被引：37

作者：

GHANDHI, SK

BHAT, I

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.94916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：779 / 781

页数：3

共 11 条

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