HIGH-FIELD TRANSPORT IN AN INGAAS-INP SUPERLATTICE GROWN BY CHEMICAL BEAM EPITAXY

被引：32

作者：

VUONG, THH ^{[1
]}

TSUI, DC ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：981 / 983

页数：3

共 11 条

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[2]

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[4] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J].

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[7]

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[8] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

LEVINE, BF ;

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MALIK, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (16) :1092-1094

[9] CHEMICAL BEAM EPITAXY OF INP AND GAAS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1234-1236

[10] DEPENDENCE OF THE CONDUCTION IN IN0.53GA0.47AS-INP DOUBLE-BARRIER TUNNELING STRUCTURES ON THE MESA-ETCHING PROCESS [J].

VUONG, THH ;

TSUI, DC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :1004-1006

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