DEPENDENCE OF THE CONDUCTION IN IN0.53GA0.47AS-INP DOUBLE-BARRIER TUNNELING STRUCTURES ON THE MESA-ETCHING PROCESS

被引：13

作者：

VUONG, THH ^{[1
]}

TSUI, DC ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.97989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1004 / 1006

页数：3

共 21 条

[1] CHEMICAL ETCHING OF INP AND INGAASP INP
ADACHI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 609 - 613
[2] FERMI LEVEL PINNING AND CHEMICAL INTERACTIONS AT METAL-INXGA1-XAS(100) INTERFACES
BRILLSON, LJ
SLADE, ML
VITURRO, RE
KELLY, MK
TACHE, N
MARGARITONDO, G
WOODALL, JM
KIRCHNER, PD
PETTIT, GD
WRIGHT, SL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 919 - 923
[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[4] DETERMINATION OF IN0.53GA0.47AS LAYER THICKNESSES FROM ETCHED STEPS
ELDER, DI
CLAWSON, AR
[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (04) : 340 - 340
[5] GOLDMAN VJ, UNPUB
[6] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS
LURYI, S
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 490 - 492
[7] TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS
MENDEZ, EE
CALLEJA, E
WANG, WI
[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 6026 - 6029
[8] ON THE FERMI LEVEL PINNING BEHAVIOR OF METAL/III-V SEMICONDUCTOR INTERFACES
NEWMAN, N
SPICER, WE
KENDELEWICZ, T
LINDAU, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 931 - 938
[9] SELF-CONSISTENT ANALYSIS OF RESONANT TUNNELING CURRENT
OHNISHI, H
INATA, T
MUTO, S
YOKOYAMA, N
SHIBATOMI, A
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1248 - 1250
[10] RESONANT TUNNELING TRANSPORT AT 300-K IN GAAS-ALGAAS QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAY, S
RUDEN, P
SOKOLOV, V
KOLBAS, R
BOONSTRA, T
WILLIAMS, J
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1666 - 1668

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