TUNNELING THROUGH INDIRECT-GAP SEMICONDUCTOR BARRIERS

被引：102

作者：

MENDEZ, EE

CALLEJA, E

WANG, WI

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.6026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：6026 / 6029

页数：4

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共 20 条

[1] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343
[2] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (12) : 766 - 769
[3] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION
BATEY, J
WRIGHT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 200 - 209
[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[5] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BONNEFOI, AR
COLLINS, RT
MCGILL, TC
BURNHAM, RD
PONCE, FA
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287
[6] BONNEFOI AR, 1986, B AM PHYS SOC, V31, P395
[7] CASEY HC, 1978, HETEROSTRUCTURE LA B, P17
[8] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HASE, I
KAWAI, H
KANEKO, K
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3792 - 3797
[9] THEORY OF TUNNELING
KANE, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +
[10] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS
LEE, HJ
JURAVEL, LY
WOOLLEY, JC
SPRINGTHORPE, AJ
[J]. PHYSICAL REVIEW B, 1980, 21 (02) : 659 - 669