RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54

作者：

BONNEFOI, AR ^{[1
]}

COLLINS, RT ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

PONCE, FA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

ELECTRONS - Tunneling - MOLECULAR BEAMS - Applications - SEMICONDUCTING GALLIUM ARSENIDE - Testing - SEMICONDUCTOR MATERIALS - Testing;

D O I：

10.1063/1.95660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present a report on a study of current transport perpendicular to two AlAs barriers separated by a GaAs quantum well in a GaAs/AlAs heterostructure grown by MOCVD. The I-V curves and their derivatives show evidence of resonant tunneling through the structure. Effects corresponding to the first resonance in the GaAs quantum well are visible in the I-V curves at room temperature, and negative resistance regions are observed at temperature as high as 260 K. The low-temperature I-V curves also display an additional structure corresponding to resonant tunneling through the second and perhaps the third energy levels in the well.

引用

页码：285 / 287

页数：3

共 16 条

[1] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT [J].