INELASTIC TUNNELING CHARACTERISTICS OF ALAS GAAS HETEROJUNCTIONS

被引：31

作者：

COLLINS, RT ^{[1
]}

LAMBE, J ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.94828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：532 / 534

页数：3

共 10 条

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[8]

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[9] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J].

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[10] LOW-TEMPERATURE OPERATION OF MULTIPLE QUANTUM-WELL ALXGA1-XAS-GAAS P-N HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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