MOLECULAR-BEAM EPITAXIAL-GROWTH AND ELECTRICAL TRANSPORT OF GRADED BARRIERS FOR NON-LINEAR CURRENT CONDUCTION

被引：77

作者：

GOSSARD, AC

BROWN, W

ALLYN, CL

WEIGMANN, W

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：694 / 700

页数：7

相关论文

共 14 条

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY
ALLYN, CL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376
[2] CASEY HC, 1978, HETEROSTRUCTURE LA A
[3] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY
CHANG, LL
SEGMULLER, A
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41
[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[5] DINGLE R, 1975, FESTKORPERPROBLEME, V20
[6] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS
FLEMING, RM
MCWHAN, DB
GOSSARD, AC
WIEGMANN, W
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 357 - 363
[7] INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS
GARNER, CM
SU, CY
SHEN, YD
LEE, CS
PEARSON, GL
SPICER, WE
EDWALL, DD
MILLER, D
HARRIS, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3383 - 3389
[8] GAAS-A1AS LAYERED FILMS
GOSSARD, AC
[J]. THIN SOLID FILMS, 1979, 57 (01) : 3 - 13
[9] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION
GOSSARD, AC
PETROFF, PM
WEIGMANN, W
DINGLE, R
SAVAGE, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325
[10] PHOTOCOLLECTION EFFICIENCY AND INTERFACE CHARGES OF MBE-GROWN ABRUPT P(GAAS)-N(AL0.33GA0.67AS) HETEROJUNCTIONS
KROEMER, H
CHIEN, WY
CASEY, HC
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 749 - 751