A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON

被引：422

作者：

JONES, KS ^{[1
]}

PRUSSIN, S ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 45卷 / 01期

关键词：

D O I：

10.1007/BF00618760

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 34

页数：34

共 137 条

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