COMPOSITION AND RESISTIVITY OF SPUTTERED TUNGSTEN SILICIDES

被引：5

作者：

HARA, T

HAYASHIDA, H

TAKAHASHI, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期

关键词：

D O I：

10.1149/1.2095855

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：970 / 973

页数：4

共 9 条

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[3]

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[4]

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[5]

HARA T, 1987, SEMICOND WORLD JUN, P58

[6]

HARA T, IN PRESS

[7] ELECTRICAL TRANSPORT PROPERTIES OF TUNGSTEN SILICIDE THIN FILMS. [J].

Li, B.Z. ;

Aitken, R.G. .

Applied Physics Letters, 1985, 46 (04) :401-403

[8]

MOHAMMADI F, 1983, J ELCHEM SO, V127, P450

[9] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J].

SARASWAT, KC ;

BRORS, DL ;

FAIR, JA ;

MONNIG, KA ;

BEYERS, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1497-1505

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