ANALYSIS OF AC AND TRANSIENT PROPERTIES OF JUNCTION TRANSISTORS THROUGH CONCEPT OF COMPLEX LIFETIME

被引：5

作者：

ACHUTHAN, MK

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1970年 / 28卷 / 03期

关键词：

D O I：

10.1080/00207217008900123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：271 / &

共 10 条

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[2] EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS [J].

EARLY, JM .

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LINDMAYER, J ;

WRIGLEY, CY .

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[4]

LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P86

[5] FREQUENCY VARIATIONS OF JUNCTION-TRANSISTOR PARAMETERS [J].

PRITCHARD, RL .

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[6] NARROW BASE GERMANIUM PHOTODIODES [J].

SAWYER, DE ;

REDIKER, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1122-1130

[7] P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W ;

SPARKS, M ;

TEAL, GK .

PHYSICAL REVIEW, 1951, 83 (01) :151-162

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[9] 2-TERMINAL P-N JUNCTION DEVICES FOR FREQUENCY CONVERSION AND COMPUTATION [J].

UHLIR, A .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (09) :1183-1191

[10] STORED CHARGE METHOD OF TRANSISTOR BASE TRANSIT ANALYSIS [J].

VARNERIN, LJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (04) :523-527

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