CHEMICAL MODIFICATION OF INSULATORS BY ION-IMPLANTATION, FUNDAMENTAL MECHANISMS AND ASTROPHYSICAL IMPLICATIONS

被引：28

作者：

ROSSLER, K

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1986年 / 99卷 / 1-4期

关键词：

D O I：

10.1080/00337578608209613

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：21 / 70

页数：50

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