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ELECTRON MOBILITIES BASED ON AN EXACT NUMERICAL-ANALYSIS OF THE DIELECTRIC-FUNCTION-DEPENDENT LINEARIZED POISSON EQUATION FOR THE POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS - COMMENT

被引：4
作者：
CSAVINSZKY, P
MORROW, RA
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 23卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.23.4263
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4263 / 4265
页数：3
相关论文
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[10]   ELECTRON MOBILITIES BASED ON AN EXACT NUMERICAL-ANALYSIS OF THE DIELECTRIC FUNCTION-DEPENDENT LINEARIZED POISSONS-EQUATION FOR THE POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS [J].
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