共 10 条
[1]
HIGH-QUALITY SOI BY BONDING OF STANDARD SI WAFERS AND THINNING BY POLISHING TECHNIQUES ONLY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1989, 28 (05)
:L725-L726
[2]
DIVERSITY AND FEASIBILITY OF DIRECT BONDING - A SURVEY OF A DEDICATED OPTICAL-TECHNOLOGY
[J].
APPLIED OPTICS,
1994, 33 (07)
:1154-1169
[3]
SILICON-ON-INSULATOR WAFER BONDING-WAFER THINNING TECHNOLOGICAL EVALUATIONS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1989, 28 (08)
:1426-1443
[4]
SOI TECHNOLOGIES - THEIR PAST, PRESENT AND FUTURE
[J].
JOURNAL DE PHYSIQUE,
1988, 49 (C-4)
:3-12
[6]
HAISMA J, 1967, 1 PHIL RES REP, P1
[7]
HAISMA J, 1988, J PHYSIQUE S9, V49, P12