SILICON-ON-INSULATOR WAFER BONDING-WAFER THINNING TECHNOLOGICAL EVALUATIONS

被引：73

作者：

HAISMA, J

SPIERINGS, GACM

BIERMANN, UKP

PALS, JA

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.1426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1426 / 1443

页数：18

共 30 条

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