ANTIMONY, ARSENIC, PHOSPHORUS, AND BORON AUTODOPING IN SILICON EPITAXY

被引：23

作者：

GRAEF, MWM ^{[1
]}

LEUNISSEN, BJH ^{[1
]}

DEMOOR, HHC ^{[1
]}

机构：

[1] CATHOLIC UNIV NIJMEGEN,DEPT SOLID STATE PHYS,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS

来源：

关键词：

D O I：

10.1149/1.2114258

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1942 / 1954

页数：13

共 42 条

[1]

Barin, 1973, THERMODYNAMICAL PROP

[2]

Barin I., 1977, THERMODYNAMICAL PROP

[3] INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH [J].

BLOEM, J ;

GILING, LJ ;

GRAEF, MWM .

BLOEM, J .

CARLSSON, JO .

JOURNAL OF THE LESS-COMMON METALS, 1980, 71 (01) :15-32

[6]

CARLSSON JO, 1984, ELECTROCHEMICAL SOC, V84, P241

[7]

CHANG HR, 1983, ELECTROCHEMICAL SOC, V83, P548

[8]

CHANG HR, 1984, ELECTROCHEMICAL SOC, V84, P177

[9]

GENTNER JL, 1981, THESIS U CLERMONT 2

[10]

GILING LJ, 1975, J CRYST GROWTH, V31, P317, DOI 10.1016/0022-0248(75)90147-5