EFFECT OF TRACE AMOUNTS OF WATER VAPOR ON BORON DOPING IN EPITAXIALLY GROWN SILICON

被引：15

作者：

BLOEM, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 11期

关键词：

D O I：

10.1149/1.2407847

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1837 / &

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共 14 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511
[2] SILICON EPITAXY FROM MIXTURES OF SIH4 AND HC1
BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1397 - &
[3] BROUWER G, 1954, PHILIPS RES REP, V9, P366
[4] DIRECT DETECTION OF BORANE MOLECULE + BORYL RADICAL BY MASS SPECTROMETRY
FEHLNER, TP
KOSKI, WS
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1964, 86 (13) : 2733 - &
[5] Joyce B. A., 1968, Journal of Crystal Growth, V3-4, P43, DOI 10.1016/0022-0248(68)90100-0
[6] KROON SM, PRIVATE COMMUNICATIO
[7] KUBASHEWSKI O, 1956, METALLURGICAL THERMO
[8] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
MAZUR, RG
DICKEY, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &
[9] DOPING OF EPITAXIAL SILICON FILMS
SHEPHERD, WH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 541 - &
[10] MASS-SPECTROMETRIC INVESTIGATION OF LOW-PRESSURE DISSOCIATION OF B2H6
SINKE, EJ
PRESSLEY, GA
BAYLIS, AB
STAFFORD, FE
[J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (07) : 2207 - &