SILICON EPITAXY FROM MIXTURES OF SIH4 AND HC1

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1469 - &

[3] The characteristics of thermal diffusion [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1940, 177 (A968) : 0038 - 0062

[4] CHAPMAN S, 1952, MATHEMATICAL THEORY

[5] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[6] EVERSTEY.FC, 1969, J ELECTROCHEM SOC, V116, pC377

[7] Grew K. E., 1952, THERMODIFFUSION GASE

[8] HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS

[9] LANG GA, 1963, RCA REV, V24, P488

[10] LEVER RF, 1964, IBM J, P460

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1469 - &

[3] The characteristics of thermal diffusion [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1940, 177 (A968) : 0038 - 0062

[4] CHAPMAN S, 1952, MATHEMATICAL THEORY

[5] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[6] EVERSTEY.FC, 1969, J ELECTROCHEM SOC, V116, pC377

[7] Grew K. E., 1952, THERMODIFFUSION GASE

[8] HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS

[9] LANG GA, 1963, RCA REV, V24, P488

[10] LEVER RF, 1964, IBM J, P460