DIELECTRIC ISOLATION OF SILICON BY ANODIC BONDING

被引：62

作者：

ANTHONY, TR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.336143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1240 / 1247

页数：8

共 20 条

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