ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES

被引：140

作者：

KASPER, E ^{[1
]}

HERZOG, HJ ^{[1
]}

机构：

[1] FORSCH INST ULM,AEG TELEFUNKEN,ULM,FED REP GER

来源：

THIN SOLID FILMS | 1977年 / 44卷 / 03期

关键词：

D O I：

10.1016/0040-6090(77)90443-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：357 / 370

页数：14

共 23 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM
ABBINK, HC
BROUDY, RM
MCCARTHY, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &
[2] EPITAXIAL-GROWTH OF SILICON-GERMANIUM SINGLE-CRYSTALS
AHARONI, H
BARLEV, A
BLECH, IA
MARGALIT, S
[J]. THIN SOLID FILMS, 1972, 11 (02) : 313 - &
[3] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING
ALEKSANDROV, LN
LOVYAGIN, RN
PCHELYAKOV, OP
STENIN, SI
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301
[4] INVESTIGATION OF GERMANIUM FILMS AND GE-SI INTERFACE STRUCTURE BY TRANSMISSION ELECTRON-MICROSCOPY
ASEEV, AL
VASIN, OI
STENIN, SI
SOLDATENKO, NN
TKHORIK, YA
[J]. THIN SOLID FILMS, 1975, 30 (01) : 73 - 82
[5] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP
BRENNER, A
SENDEROFF, S
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123
[6] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES
CULLIS, AG
BOOKER, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &
[7] Kasper E., 1976, Wissenschaftliche Berichte AEG-Telefunken, V49, P213
[8] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY
KASPER, E
HERZOG, HJ
KIBBEL, H
[J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205
[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS
MATTHEWS, JW
MADER, S
LIGHT, TB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3800 - &
[10] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS
MATTHEWS, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133

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