ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY

被引：202

作者：

KASPER, E ^{[1
]}

HERZOG, HJ ^{[1
]}

KIBBEL, H ^{[1
]}

机构：

[1] AEG TELEFUNKEN, FORSCH INST, D-7900 ULM, FED REP GER

来源：

APPLIED PHYSICS | 1975年 / 8卷 / 03期

关键词：

D O I：

10.1007/BF00896611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：199 / 205

页数：7

共 23 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM
ABBINK, HC
BROUDY, RM
MCCARTHY, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &
[2] DEFECTS IN EPITAXIAL LAYERS OF SILICON-GERMANIUM GROWN ON SILICON SUBSTRATES
AHARONI, H
BARLEV, A
MARGALIT, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 254 - &
[3] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V5, P174
[4] MAN-MADE SUPERLATTICE CRYSTALS
BALKESLE.AE
ALIOTTA, CF
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (06) : 686 - &
[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[6] CARBON CONTAMINATION OF SI(111) SURFACES
CHARIG, JM
SKINNER, DK
[J]. SURFACE SCIENCE, 1969, 15 (02) : 277 - &
[7] GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (11) : 467 - &
[8] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES
CULLIS, AG
BOOKER, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &
[9] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[10] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE
ESAKI, L
CHANG, LL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

← 1 2 3 →