ION-BEAM INDUCED CRYSTALLIZATION AND AMORPHIZATION AT A CRYSTALLINE AMORPHOUS INTERFACE IN [100] SILICON

被引:35
作者
LEIBERICH, A [1 ]
MAHER, DM [1 ]
KNOELL, RV [1 ]
BROWN, WL [1 ]
机构
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1016/S0168-583X(87)80090-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:457 / 461
页数:5
相关论文
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ELLIMAN RG, COMMUNICATION
[2]  
HOLMEN G, 1985, PHYS REV, V32, P2770
[3]  
LINNROS J, 1985, ION BEAM INDUCED CRY
[4]  
Westmoreland J. E., 1970, Radiation Effects, V6, P161, DOI 10.1080/00337577008236293
[5]   DOMINANT INFLUENCE OF BEAM-INDUCED INTERFACE REARRANGEMENT ON SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON [J].
WILLIAMS, JS ;
ELLIMAN, RG ;
BROWN, WL ;
SEIDEL, TE .
PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1482-1485