DOMINANT INFLUENCE OF BEAM-INDUCED INTERFACE REARRANGEMENT ON SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：159

作者：

WILLIAMS, JS ^{[1
]}

ELLIMAN, RG ^{[1
]}

BROWN, WL ^{[1
]}

SEIDEL, TE ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.55.1482

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1482 / 1485

页数：4

共 14 条

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[4] ION-BEAM INDUCED EPITAXY OF SILICON [J].

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[5] ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE [J].

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[6] NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS-SILICON BY HIGH-ENERGY ION-BEAM [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (08) :686-688

[7] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].

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[8]

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[9] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS [J].

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[10]

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