INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL

[1] Balluffi R.W., 1979, DISLOCATIONS SOLIDS

[2] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 173 - 182

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[5] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403

[6] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1119 - &

[7] Fletcher J., 1981, Microscopy of Semiconducting Materials, 1981. Proceedings of the 2nd Oxford Conference, P121

[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926

[9] MELTING PHENOMENON AND PROPERTIES OF DEFECTS ASSOCIATED WITH PULSED LASER IRRADIATION [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (06): : 1515 - 1535

[10] FORMATION OF METASTABLE SUPERSATURATED SOLID-SOLUTIONS IN ION-IMPLANTED SILICON DURING SOLID-PHASE CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 239 - 242

[1] Balluffi R.W., 1979, DISLOCATIONS SOLIDS

[2] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 173 - 182

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[4] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[5] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403

[6] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1119 - &

[7] Fletcher J., 1981, Microscopy of Semiconducting Materials, 1981. Proceedings of the 2nd Oxford Conference, P121

[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926

[9] MELTING PHENOMENON AND PROPERTIES OF DEFECTS ASSOCIATED WITH PULSED LASER IRRADIATION [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (06): : 1515 - 1535

[10] FORMATION OF METASTABLE SUPERSATURATED SOLID-SOLUTIONS IN ION-IMPLANTED SILICON DURING SOLID-PHASE CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 239 - 242