ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON

被引：41

作者：

ELLIMAN, RG ^{[1
]}

JOHNSON, ST ^{[1
]}

POGANY, AP ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL,CTR MICROELECTR TECHNOL,MELBOURNE,VIC 3001,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90571-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：310 / 315

页数：6

共 17 条

[1] PULSED PROTON-BEAM ANNEALING - SEMICONDUCTORS AND SILICIDES [J].

BAGLIN, JEE ;

HODGSON, RT ;

CHU, WK ;

NERI, JM ;

HAMMER, DA ;

CHEN, LJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3) :169-176

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[4]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[5]

ELLIMAN RG, 1983, UNPUB P MRS M BOSTON

[6]

ELLIMAN RG, UNPUB APPL PHYS LETT

[7] ION-BEAM INDUCED EPITAXY OF SILICON [J].

GOLECKI, I ;

CHAPMAN, GE ;

LAU, SS ;

TSAUR, BY ;

MAYER, JW .

PHYSICS LETTERS A, 1979, 71 (2-3) :267-269

[8]

HOLMEN G, 1975, RAD EFFECTS, V25, P45

[9] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[10] NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS-SILICON BY HIGH-ENERGY ION-BEAM [J].

NAKATA, J ;

KAJIYAMA, K .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :686-688

← 1 2 →