PULSED PROTON-BEAM ANNEALING - SEMICONDUCTORS AND SILICIDES

被引：29

作者：

BAGLIN, JEE

HODGSON, RT

CHU, WK

NERI, JM

HAMMER, DA

CHEN, LJ

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

[2] CORNELL UNIV,PLASMA STUDIES LAB,ITHACA,NY 14853

[3] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 191卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(81)91000-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：169 / 176

页数：8

共 27 条

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FOTI, G .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :259-265

[2]

CAMARCAT N, 1978, COLLECTIVE METHODS A, P413

[3]

CULLIS AG, 1980, LASER ELECTRON BEAM, P220

[4]

ELLIOTT RP, 1965, CONSTITUTION BINA S1

[5]

FERRIS SD, 1979, AIP C P, V50

[6] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

[7] EVIDENCE FOR PARTIAL SOLID-STATE REGROWTH DURING PULSED-LASER ANNEALING [J].

GIBSON, JM ;

TSU, R .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :197-200

[8] RECRYSTALLIZATION OF SILICON-ON-SAPPHIRE BY CW AR LASER IRRADIATION - COMPARISON BETWEEN THE SOLID-PHASE AND THE LIQUID-PHASE REGIMES [J].

GOLECKI, I ;

KINOSHITA, G ;

GAT, A ;

PAINE, BM .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :919-921

[9]

GOLECKI I, 1979, THIN SOLID FILMS, V57, P613

[10] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

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