EVIDENCE FOR PARTIAL SOLID-STATE REGROWTH DURING PULSED-LASER ANNEALING

被引：9

作者：

GIBSON, JM

TSU, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：197 / 200

页数：4

共 11 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2]

AUSTON DH, 1978, AIP C P, V50, P11

[3] STRUCTURE TRANSITIONS IN AMORPHOUS SILICON UNDER LASER IRRADIATION [J].

BERTOLOTTI, M ;

VITALI, G ;

RIMINI, E ;

FOTI, G .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :259-265

[4]

GIBSON JM, 1980, I PHYS C SER, V52, P149

[5] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF AMORPHOUS THIN-FILMS [J].

HOWIE, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) :41-55

[6] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[7] DYNAMIC BEHAVIOR OF PULSED-LASER ANNEALING IN ION-IMPLANTED SILICON - MEASUREMENT OF THE TIME-DEPENDENT OPTICAL REFLECTANCE [J].

MURAKAMI, K ;

KAWABE, M ;

GAMO, K ;

NAMBA, S ;

AOYAGI, Y .

PHYSICS LETTERS A, 1979, 70 (04) :332-334

[8]

SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447

[9]

TSU R, 1978, AIP C SER, V50, P344

[10] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

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