DYNAMIC BEHAVIOR OF PULSED-LASER ANNEALING IN ION-IMPLANTED SILICON - MEASUREMENT OF THE TIME-DEPENDENT OPTICAL REFLECTANCE

被引：35

作者：

MURAKAMI, K

KAWABE, M

GAMO, K

NAMBA, S

AOYAGI, Y

机构：

[1] UNIV TSUKUBA,INST MAT SCI,SAKURA,IBARAKI 30031,JAPAN

[2] INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN

来源：

PHYSICS LETTERS A | 1979年 / 70卷 / 04期

关键词：

D O I：

10.1016/0375-9601(79)90140-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In order to investigate the dynamic behavior of laser annealing processes, we have measured the time-dependent optical reflectance of ion-implanted silicon under pulsed-laser irradiation. We found that the amorphous to crystalline transition is completed within several hundred ns, depending on the laser energy and the pulse width. © 1979.

引用

页码：332 / 334

页数：3

共 9 条

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[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
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RUDIGER, J
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[5] MURAKAMI K, UNPUBLISHED
[6] LASER-PULSE ENERGY-DEPENDENCE OF ANNEALING IN ION-IMPLANTED SI AND GAAS SEMICONDUCTORS
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[J]. PHYSICS LETTERS A, 1978, 65 (02) : 153 - 155
[7] SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309
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[9] LASER ANNEALING OF BORON-IMPLANTED SILICON
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MURAKAMI, M
KING, PW
KRAMER, SD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141

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