REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING

被引：137

作者：

VANVECHTEN, JA ^{[1
]}

TSU, R ^{[1
]}

SARIS, FW ^{[1
]}

HOONHOUT, D ^{[1
]}

机构：

[1] FOM,INST ATOOM & MOLECUULFYS,AMSTERDAM,NETHERLANDS

来源：

PHYSICS LETTERS A | 1979年 / 74卷 / 06期

关键词：

D O I：

10.1016/0375-9601(79)90241-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Many recent publications dealing with Si pulsed laser annealing have assumed that the transformation is strictly thermal melting-recrystallization. We recount observations indicating the material was not subjected to thermal melting. © 1979.

引用

页码：417 / 421

页数：5

共 34 条

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING
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[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
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[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS
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[4] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING
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CAMPISANO, SU
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[5] PHASE DIAGRAMS OF SILICON AND GERMANIUM TO 200 KBAR 1000 DEGREE C
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[6] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM
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[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &
[7] CULLIS AG, 1979, LASER SOLID INTERACT, P311
[8] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
GLASSBRENNER, CJ
SLACK, GA
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +
[9] HODGSON RT, 1979, B AM PHYS SOC, V24, P315
[10] DOPANT SEGREGATION IN SILICON BY PULSED-LASER ANNEALING - TEST CASE FOR THE CONCEPT OF THERMAL MELTING
HOONHOUT, D
SARIS, FW
[J]. PHYSICS LETTERS A, 1979, 74 (3-4) : 253 - 255

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