CHARACTERIZATION OF CDTE CRYSTALS GROWN UNDER MICROGRAVITY CONDITIONS

被引：7

作者：

SIFFERT, P ^{[1
]}

BIGLARI, B ^{[1
]}

SAMIMI, M ^{[1
]}

HAGEALI, M ^{[1
]}

KOEBEL, JM ^{[1
]}

NITSCHE, R ^{[1
]}

BRUDER, M ^{[1
]}

DIAN, R ^{[1
]}

SCHONHOLZ, R ^{[1
]}

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,D-7800 FREIBURG,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1989年 / 283卷 / 02期

关键词：

D O I：

10.1016/0168-9002(89)91386-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：363 / 369

页数：7

共 14 条

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SIFFERT, P .

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[3] SEEDED VAPOR GROWTH OF CADMIUM TELLURIDE USING FOCUSED RADIATION HEATING [J].

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[8]

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[9] INVESTIGATION OF DEFECTS IN THM GROWN CADMIUM TELLURIDE AFTER IRRADIATION DAMAGING [J].

SAMIMI, M ;

BIGLARI, B ;

HAGEALI, M ;

SIFFERT, P .

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[10] GROWTH OF CADMIUM TELLURIDE CRYSTALS BY AN IMPROVED TRAVELING HEATER METHOD [J].

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DIAN, R ;

NITSCHE, R .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :72-79

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