REACTIVE ION ETCHING FOR SUB-MICRON STRUCTURES

被引：15

作者：

CHINN, JD ^{[1
]}

ADESIDA, I ^{[1
]}

WOLF, ED ^{[1
]}

TIBERIO, RC ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1418 / 1422

页数：5

共 6 条

[1] ADESIDA I, 1979, THESIS U CALIFORNIA
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BROERS, AN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 166 - 170
[3] PLASMA-ETCHING - DISCUSSION OF MECHANISMS
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403
[4] COBURN JW, 1979, SOLID STATE TECHNOL, V22, P117
[5] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2
EPHRATH, LM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421
[6] KERN W, 1978, THIN FILM PROCESSES, P401