RESOLUTION LIMITS OF PMMA RESIST FOR EXPOSURE WITH 50 KV ELECTRONS

被引：112

作者：

BROERS, AN

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 01期

关键词：

D O I：

10.1149/1.2127360

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：166 / 170

页数：5

共 23 条

[1] HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY ON THIN-FILMS [J].

ADESIDA, I ;

EVERHART, TE ;

SHIMIZU, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1743-1748

[2] PROXIMITY EFFECT DEPENDENCE ON SUBSTRATE MATERIAL [J].

AIZAKI, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1726-1733

[3] 250-A LINEWIDTHS WITH PMMA ELECTRON RESIST [J].

BROERS, AN ;

HARPER, JME ;

MOLZEN, WW .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :392-394

[4] NEW HIGH-RESOLUTION ELECTRON-PROBE [J].

BROERS, AN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06) :979-982

[5] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275

[6] REPLICATION OF 175-A LINES AND SPACES IN POLYMETHYLMETHACRYLATE USING X-RAY-LITHOGRAPHY [J].

FLANDERS, DC .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :93-96

[7] IMPACT OF ELECTRON-SCATTERING ON LINEWIDTH CONTROL IN ELECTRON-BEAM LITHOGRAPHY [J].

GREENEICH, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1749-1753

[8]

GROBMAN WD, 1978, 8TH P INT C EL ION B, P276

[9] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].

HALLER, I ;

HATZAKIS, M ;

SRINIVASAN, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) :251-+

[10] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J].

HOWARD, RE ;

HU, EL ;

JACKEL, LD ;

GRABBE, P ;

TENNANT, DM .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :592-594

← 1 2 3 →