IMPACT OF ELECTRON-SCATTERING ON LINEWIDTH CONTROL IN ELECTRON-BEAM LITHOGRAPHY

被引：28

作者：

GREENEICH, JS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.570286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1749 / 1753

页数：5

共 12 条

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[2] CHUNG MSC, 1978, 8TH INT C EL ION BEA, P242
[3] MODEL FOR EXPOSURE OF ELECTRON-SENSITIVE RESISTS
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[4] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS
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[5] DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) : 970 - 976
[6] GROBMAN WD, 1978, 8TH P INT C EL ION B, P265
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[8] JONES F, 1978, 8TH P INT C EL ION B, P265
[9] MONTE-CARLO SIMULATION OF SPATIALLY DISTRIBUTED BEAMS IN ELECTRON-BEAM LITHOGRAPHY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1305 - 1308
[10] NEUREUTHER A, 1978, 8TH P INT C EL ION B, P265