DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST

被引：139

作者：

GREENEICH, JS ^{[1
]}

机构：

[1] GM CORP,RES LABS,ELECTR DEPT,WARREN,MI 48090

来源：

关键词：

D O I：

10.1149/1.2134380

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：970 / 976

页数：7

共 14 条

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06) :1056-1059

[5] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS [J].

GREENEICH, JS ;

VANDUZER, T .

GREENEICH, JS .

[7]

GREENEICH JS, 1973, THESIS U CALIFORNIA

[8]

GREENEICH JS, TO BE PUBLISHED

[9] ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION [J].

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[10]

HATZAKIS M, 1969, 10 S EL ION LAS BEAM, P107